Conformal, Low-damage Shallow Junction Technology (Xj~5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node

摘要：

　　A new conformal and damage free doping technique (monolayer doping,MLD) has been demonstrated on FinFETs with good control of short channel effects down to a gate length of~40nm and 20nm of Wfm.Unlike conventional ion-implantation,this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable ultrashallow junction (US J) of ~5nm,showing great potential for FinFET junction scaling.This low damage,conformal doping technique is promising to address key FinFET scaling issues:series resistance and short channel control for 14nm node and beyond.A sub-5nmjunction depth with a steep junction abruptness has been successfully achieved on 300mm platform.

作者: I.Ok R.Jammy K.-W.Ang C.Hobbs R.H.Baek C.Y.Kang J.Snow P.Nunan S.Nadahara P.D.Kirsch

作者单位: SEMATECH, 257 Fuller Road, Albany, NY 12203, U.S.A DNS Electronics, 820 Kifer Road, Sunnyvale, CA 94086, USA

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 29-34

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）