A Novel Plasma-based Technique for Conformal 3D FINFET Doping

摘要：

　　A novel plasma based conformal doping technique was developed in this work and process characterization was conducted for arsenic doping in terms of doping conformality,residual silicon fin damage,sheet resistance and effect of doping process parameters.Doping conformality,the ratio of doping at then fin sidewall and top,was characterized by cross-section transmission electron spectroscopy (XTEM) and through-fin secondary ion mass spectroscopy (SIMS) on fin structures.The residual post-anneal damage was also evaluated.Sheet resistance (Rs) was used for the matching to beam line implant.The effect of main doping process parameters on silicon fin amorphization was also studied.

作者: K.Han S.Tang T.Rockwell L.Godet H.Persing C.Campbell S.Salimian

作者单位: Varian Semiconductor Equipment, Silicon Systems Group, Applied Materials 35 Dory Rd., Gloucester, MA 01930, USA

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 35-37

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）