Comparison of BF2, In, Ga, C+Ga & In+BF2 Dopant for 22nm Node Bulk & PD-SOI HALO Implantation or Ground Plane Back-Gate Doping for FD-SOI CMOS Technologies

摘要：

　　We compared BF2,In,Ga,C+Ga and In+BF2 dopant species for nMOS HALO at 22nm node for planar bulk & PD-SOI or for FD-SOI ground plane back-gate doping which require steep retrograde dopant profile and good dopant activation using a 1200℃ Flash + 900℃ 10 sec RTA anneal sequence.The best results were with the C+Ga co-implant realizing a steep surface dopant profile and dopant activation in the 2-3E18/cm3 level.In dopant activation was limited to 3-7E13/cm3 due to low solid solubility limit from the 900℃ RTA anneal.The BF2,In+BF2 and Ga implant conditions all showed flat to increasing dopant profile pile-up at the surface which is not desirable.

作者: John Borland Masayasu Tanjyo Shigeki Sakai Tsutomu Nagayama Hiroki Kiyama Kyoichi Suguro

作者单位: J.O.B.Technologies, Aiea, Hawaii, USA Nissin Ion Equipment, Kyoto, Japan Dai Nippon Screen, Kyoto, Japan Toshiba, Shinsugita, Japan

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 38-41

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）