Application of Cluster Ion (carbon) implantation for Strain applications
For 28nm and beyond technology nodes it is essential to enhance carder mobility of the devices by introducing embedded Si:C structures using new materials or structures or new implant and anneal process schemes.In this article we review and verify available information using Si:C formation through implant and anneal approach with low temperature duster carbon and cluster phosphorous implants.We show here the difference in process results for single and double carbon implants for various pre-anneal and laser annealing conditions.This article explores the effect of cluster carbon implants on various pre-anneal conditions and implant temperature effects on sheet resistance,carbon substitution and junction depths which are critical in determining important device characteristics.
Karuppanan Sekar Martin Rodgers Daniel Franca Saikumar Vivekanand Nobuhiro Tokoro Hiroshi Onoda Yoshiki Nakashima Yuji Koga Nariaki Hamamoto Tsutomu Nagayama Joshua Herman Steve Novak
Nissin Ion Equipment USA Inc., Suite 21, 34 Sullivan Rd, North Billerica, MA 01862, USA College of Nanoscale Science and Engineering, University at Albany,257 Fuller Rd, Albany NY 12203, U Nissin Ion Equipment Co., Ltd, 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto, 601-8205 JAPAN
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
42-47
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）