Process Match between DSA and LSA for Ultra-shallow Junction Formation

摘要：

　　Laser anneal (LA) is one of major millisecond anneal techniques (MSA) for forming ultra-shallow and highly activated junctions.There are two major commercially available laser anneal systems which are called laser spike annealing (LSA) and dynamic surface annealing (DSA) respectively.LSA and DSA are quite different in terms of laser source,wavelength,scanning mode and so on,their hardware and process specifications are definitely distinct from each other.In this work,the process match between DSA and LSA for ultra-shallow junction formation was studied using implanted blanket wafers as well as 45nm logic device wafers.It was found that through some process tuning knobs adjustments,such as peak temperature,dwell time,DSA can match LSA thermal budget well.

作者: Yonggen He Ji Yue Tang Ganming Zhao Bing Wu Guobin Yu Yong Chen Hailong Liu Wei Lu Jingang Wu David Wei Zhang Chenyu Wang

作者单位: School of Microelectronics of Fudan University,220, Handan Road, Shanghai, PRC ;Technology R&D cente Applied Materials China, 1388 Zhangdong Road, Bldg.22, Zhangjiang Hi-Tech Park, Shanghai, PRC Technology R&D center, Semiconductor Manufacturing International Corporation, No.18, Zhangjiang Road School of Microelectronics of Fudan University,220, Handan Road, Shanghai, PRC

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 77-80

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）