Detection and Characterization of Residual Damage in Low-Dose Arsenic Implanted Silicon after High-Temperature Annealing
Residual damage in ‘tow-dose implanted and ‘high-temperature annealed Si have not been studied well due to lack of characterization technique and awareness of its risk for device degradation.In this study,we detected and eharacterized residual damage,which is existed in low-dose (1013cm-2) As implanted Si after high-temperature (1100℃) RTA in N2 and O2 mixed atmosphere.The characterization techniques we selected were CL and PAS methods.It was succeeded to reveal the existence of residual damage and identify its damage as a kind of vacancy-type of defects.Moreover,it was clear that residual damage was transformed to be the other type of defect by combined with oxygen.The details of defects and their variation during annealing will be discussed in this paper.
Akihiko Sagara Miori Hiraiwa Akira Uedono Satoshi Shibata
panasonic Corporation 3-1-1 Yagumo-nakamachi, Moriguchi, Osaka 570-8501, Japan University of Tsukuba 1-1-1 Tennoudai,Tsukuba,Ibaraki 305-8573,Japan
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
81-84
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）