Vacancy-type defects introduced by gas cluster ion implantation to Si probed by monoenergetic positron beams
Vacancy-type defects in gas cluster ion-implanted Si were probed by monoenergetic positron beams.The acceleration energy of Ar-ion clusters ranged between 20-60 keV,and the mean cluster size was 2x103 atoms.Doppler broadening spectra of the annihilation radiation were measured,and the vacancy-rich region was found to localize at a depth of 0-13 nm.Two different defect species were found to coexist in the damaged region introduced by Ar cluster ion implantation,and these were identified as divacancy-type defects and large vacancy clusters filled with Ar (micro gas bubbles).The formation of the vacancy clusters was attributed to extremely high temperature and its rapid transients in impact regions of the cluster ions.The difference between defect species introduced by Ar-and B-ion cluster ion implantation was also discussed.
A.Uedono Y.Ishikawa M.Graf K.Yamashita T.Moriya T.Tsutsui S.Kimura N.Oshima R.Suzuki S.Ishibashi H.Matsui M.Narushima
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ib Tokyo Electron Ltd.3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan TEL Epion Inc., 37 Manning Road, Billerica, MA, 01821, USA Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science an Nanosystem Research Institute(NRI)RICS, National Institute of Advanced Industrial Science and Tech
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
85-88
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）