Site-Specific and High-Spatial-Resolution Scanning Spreading Resistance Microscopy (SSRM) and Its Applications to Si Devices

摘要：

　　In this study,we review on SSRM studies on 2D carrier profiles of various devices applications including S/D engineering and failure analysis in real SRAM devices.The correlation of SSRM images with junction leakage current ofnMOSs was confirmed.We also directly observed carbon (C) co-doped Si:C nMOSs,clarifying the C doping effect on phosphorous diffusion and therefore on device characteristics.With utilizing the site-specific SSRM,we succeeded in observing the pn-junction boundary within a thin SRAM poly-Si gate with the size of less than 60 nm.We also directly observed fail bits of pMOSs with Vth variations in SRAM,clarified that the failure is originated from the phosphorus anomalous diffusion into the pMOS gate bottom.Site-specific SSRM is demonstrated having high potential for failure analysis and for charactefizaton of further scaled devices.

作者: Li Zhang

作者单位: Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation 1,Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 89-93

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）