Scanning Spreading Resistance Microscopy for carrier profiling beyond 32nm node

摘要：

　　With the continued scaling of CMOS devices down to 32nm node and beyond,device performance is very sensitive to the lateral diffusion mechanisms influencing the effective channel length.Tools are thus,required to measure with sufficient resolution and accuracy the carrier distribution.Scanning spreading resistance microscopy (SSRM) has evolved as a successful carrier-profiling technique with sub-nm resolution,less than 2 nm/decade gradient resolution and high dynamic range 1015 to 1021 cm-3.In this work,we present the approaches (methodology and special test structures) to obtain a 3D-carrier concentration map for FinFET-based devices.We also correlate the results obtained with SSRM for various process conditions and its implications on device performance.

作者: J.Mody N.Horiguchi P.Eyben W.Vandervorst G.Zsch(a)tzsch S.K(o)lling A.De Keersgieter G.Eneman A K Kambham C.Drijbooms A.Schulze T.Chiarella

作者单位: imec vzw, Kapeldreef 75, B-3001 Heverlee, Belgium,;K.U.Leuven, Department of Physics and Astronomy, imec vzw, Kapeldreef 75, B-3001 Heverlee, Belgium,;K.U.Leuven, Department of Physics and Astronomy, imec vzw, Kapeldreef 75, B-3001 Heverlee, Belgium,;K.U.Leuven, Department of Physics and Astronomy,

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 94-99

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）