BF2+ Ion Implantation and Dopant Activation in Strained Germanium-Tin (Ge1-xSnx) Epitaxial Layer

摘要：

　　BF2+ implant was performed on Ge1-xSnx epitaxial layers where x is 0.03 or 0.053.The implant depth for BF2+ implant into Ge1-xSnx alloys is larger as compared to the same implant into Ge.It is observed that the diffusion of B during a rapid thermal annealing (RTA) is substantially suppressed by the presence of Sn.Sheet resistance measurements show that the B atoms can be activated at 400 ℃ in Ge1-xSnx alloys.

作者: Genquan Han Shaojian Su Qian Zhou Lanxiang Wang Wei Wang Guangze Zhang Chunlai Xue Buwen Cheng Yee-Chia Yeo

作者单位: Department of Electrical and Computer Engineering, National University of Singapore(NUS), Singapore State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 106-108

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）