PMOS Device Performance Improvement by using Buried Contact Implants
An ultra-low energy high dose B-based implant was processed after source and drain region formedand before metal sillicide contact formed for PMOS devices.B beam-line (BL) implant and plasma doping (PLAD) using either B2H6 or BF3 gases were utilized for this process.PMOS device performance showed significant improvements,including-70 percent lower contact resistances,similar threshold and sub-threshold characteristics,and-15 percent higher drive currents without degrading off current.PLAD is preferred on this application because of its much higher throughput in this process regime.
Shu Qin Terry McDaniel L.Jennifer Liu Rob Burke Y.Jeff Hu Allen McTeer
Micron Technology Inc., Boise, ID 83707, USA
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
117-119
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）