Simulations of the terahertz AlGaN/GaN resonant tunneling diode

摘要：

　　A simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature is reported,by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well.Results show that an obvious degradation in negative differential resistance(NDR) characteristic of RTD occurs when the defect density is above 106 cm-2.Finally,a RTD oscillator is simulated,which output power of 22.59 mW at 500GHz with the DC-to-RF conversion of 8.37%.

作者: Hanbing He Wei Mao Linan Yang

作者单位: School of Microelectronics, Xidian University, Xian, 710071

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 120-122

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）