Investigation of Schottky Junction and MOS Technology for Ⅲ-Ⅴ Compound Semiconductor MOSFET Application

摘要：

　　This paper explores two low temperature technological developments related to future n-MOSFETs using Ⅲ-Ⅴ semiconductors as channel materials.(1).It was found that Yb-GaAs Schottky contact with RTA at 500℃ for 30s has good rectifying characteristics,low effective electron barrier height,low sheet resistivity,atomically sharp junction with GaAs.These properties are suitable for source/drain (S/D) formation in GaAs n-MOSFETs.(2).GaAs MOS capacitors were fabricated by E-gun deposition of LaAlO3 (LAO) dielectric and PVD deposition of TaN electrode.The capacitors with well-behaved CV characteristics with EOT=3nm,gate leakage currents 7.5×10-3 A/cm2 for 500℃ RTA treated samples at Vfb-lV were achieved.

作者: Jun Chen Teng-Chieh Ku Ming-Fu Li Albert Chin

作者单位: State Key Lab ASIC and System, Department of Microelectronics,Fudan University, Shanghai 200433, Chi Department of Electronics Engineering and Institute of Electronics,National Chiao Tung University, H

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 127-130

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）