Applications of Site-Specific Scanning Spreading Resistance Microscopy (SSRM) to Failure Analysis of Production Lines

摘要：

　　Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices.We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time.SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques.The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.

关键词： Diffusion-layer visualization SSRM site-specific impurity analysis dopant carrier LSI failure analysis SCM PN junction

作者: Youhei Hayase Keiryo Hara Shinsuke Ogata Li Zhang Haruko Akutsu Michio Kurihara Kenji Norimatsu Shinji Nagamine

作者单位: Quality Assurance Dept., Oita Operations, Semiconductor Company, Toshiba Corporation 3500, Matsuoka, Corporate R&D Center, Toshiba Corporation 3500, Matsuoka, Oita City, Oita, 870-0197, Japan Device & Process Development Center, Toshiba Corporation 3500, Matsuoka, Oita City, Oita, 870-0197, Quality Assurance Dept., Yokkaichi Operations, Semiconductor Company, Toshiba Corporation 3500, Mats

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 146-149

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）