Modeling Challenges of Advanced Doping Technologies

摘要：

　　Ultra shallow junction with high activation is necessary to reduce source/drain resistance and enable continued device scaling.The adoption of non-planar device architectures also presents new doping profile engineering challenges due to the 3D nature of the channel and source/drain regions.Advanced doping technologies are emerging to meet the new USJ and profile engineering challenge.Due to the increasing process complexity and development cost,predictive TCAD modeling will be critical.The modeling challenges of the advanced doping technologies are discussed.

作者: Jeff Wu Anson C-C Wang C-W Liu T-H Yu Ya-Yun Cheng Tzer-Min Shen Chien-Tai Chan Gino Tsai

作者单位: Taiwan Semiconductor Manufacturing Company(TSMC)Ltd., Hsinchu, Taiwan

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 150-155

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）