Numerical Simulation of Static and Dynamic Operation Performance of SOI VLT LDMOS Considering Electrical-thermal Couple Effects
Varied Lateral Thickness (VLT) technology is a novel voltage-sustaining technology which has been developed recently.This paper focuses on the static and dynamic operation performance of SOI LDMOS using the VLT technology.Firstly,the VLT LDMOS is optimized by using the TCAD tool to maximize the off-state breakdown voltage.The results show that the drift doping concentration and the breakdown voltage of the VLT device increase by 59.2% and 11.8% compared with the conventional REduce SURface Field (RESURF) LDMOS,respectively.Secondly,the static I-V characteristic and the dynamic Ⅰ-V characteristic of the both devices are investigated in detail.The carrier mobility and the impact ionization are analyzed to explore the physical mechanism of the electro-thermal couple effects under the continual and pulse biased voltages.The results show that the VLT LDMOS has higher breakdown voltage,larger operating current and improved static/dynamic Safe Operating Area (SOA).
VLT SOI LDMOS SOA breakdown voltage
Jun Huang Tingting Hua Yufeng Guo Yue Xu Xiaojuan Xia Ying Zhang Gene Sheu
School of Electronics Science and Engineering, Nanjing University of Posts and Telecommunications, N Department of Computer Science & Information Engineering, Asia University, Taichung 41354
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
156-159
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）