On the Grain Boundary Barrier Height and Threshold Voltage of Undoped Polycrystalline Silicon Thin-Film Transistors

摘要：

　　Based on the surface potential calculation by the 1-D poissons equation,the grain boundary barrier height at channel surface is derived accurately assuming an exponential density of trap states (DOS) within the energy gap.The threshold voltage is defined as the gate voltage when the free charge density is equal to the trapped charge density at the surface of channel,corresponding to the depleted region width near the grain boundary is equal to one half of grain size.The grain size dependent threshold voltage is verified by the available experimental data.A new approach to extract the threshold voltage is also presented from the transconductance by the improvement on D.C.Moschou et als work.

作者: Hongyu He Wanling Deng Jin He Xueren Zheng

作者单位: Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institute, Shenzhen 5180 Department of Electronic Engineering, Jinan University, Guangzhou 510630, China Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institute, Shenzhen 5180 School of Electronic and Information Engineering, South China University of Technology,Guangzhou 510

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 160-163

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）