Explicit Approximation of Surface Potential for Fully-depleted Polysilicon Thin-Film Transistors

摘要：

　　A physical-based and explicit calculation of surface potential for fully-depleted polysilicon thin-film transistors is proposed in this paper.For fully-depleted devices,not only the surface potential in the channel,but also the potential at the back surface are solved analytically.An exponential density of defect states is taken into account.The proposed scheme to calculate the surface potential at both interfaces is derived by using the Lambert W function,which greatly improves computational efficiency and is critical in circuit simulation.The effects of trap state density and film thickness on surface potential was discussed.It is verified that the proposed scheme accurately reproduces the numerical results.

作者: Xiaoyu Ma Wanling Deng Junkai Huang

作者单位: Department of Electronic Engineering, Jinan University, Guangzhou 510630, China

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 164-167

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）