Study of Carrier Transport through GexSi1-x/Si Heterojunctions by Using 2D Monte Carlo Simulation Method

摘要：

　　This work presents two-dimensional (2-D) self-consistent Monte Carlo (MC) simulation of the properties and physics underlying carrier transport through GexSi1-x/Si heterojunctions.Carder transport in the two different semiconductor materials is included simultaneously and carrier crossing the heterojunction interface is modeled by the thermionic emission.The Si full-band structure obtained from the empirical pseudo potential method is taken into account; for GexSi1-x,the band structures also depict accurately the critical symmetry points in the Brillouin zone.Moreover,various scattering mechanisms have been employed,especially in the GexSi1-x alloy for which an approach is proposed from the individual scattering system of Si and Ge.

作者: Kangliang Wei Xiaoyan Liu Gang Du

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 168-171

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）