Benchmarking of Novel Contact Architectures on Silicon and Germanium

摘要：

　　Novel contact architectures to n-Silicon (n-Si) and to n-Germanium (n-Ge) were benchmarked for the first time against the state-of-the-art contact architecture to n-Si.It was found that although the recently reported contact architectures to n-Ge exhibit markedly improved performance,they still lag state-of the-art NiSi/n-Si contact architecture in terms of current-carrying capability.

作者: Khaled Ahmed Saurabh Chopra Ashish Agrawal Suman Datta

作者单位: Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California, USA Department of Electrical Engineering, Pennsylvania State University, College Park, Pennsylvania, USA

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 180-183

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）