Planar and Nanowire Schottky Barrier MOSFETs on SOI with NiSi and Epitaxial NiSi2 Contacts

摘要：

　　The scaling of Schottky barrier (SB)-MOSFETs is investigated experimentally and by simulations for devices with minimum gate length as small as 20nm.The results reveal that the scaling of SB-MOSFETs with undoped silicide contacts and thus with fairly large SB has severe limitations.In contrast to normal MOSFETs,the smaller SB transistors provide lower currents due to the increasing overlap of the source/drain potential in the channel.Better scaling behavior can only be achieved for SB-MOSFETs with SB≤0.1eV.Boron and arsenic implantations into silicide (IIS) are used to lower the effective SB height (SBH).With the reduced effective SBH the experimental results demonstrate that the scaling of SB-MOSFETs behaves like conventional MOSFETs.The performance of nanowire devices is significantly improved due to the better electrostatics and the high hole mobilities on the (110) side walls.

关键词： Schottky-MOSFET scaling epitaxial NiSi2 short channel effects implantation into silicide dopant segregation

作者: Q.T.Zhao L.Knoll A.Sch(a)fer S.Trellenkamp K.K.Bourdelle S.Mantl

作者单位: Peter G(u)nberg Institute 9(PGI 9-IT), Forschungszentrum Jilich, 52425 Jülich, Germany ;JARA Fundame SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 186-191

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）