Self-aligned Contact Metallization for Ⅲ-V Channel Field-Effect Transistors

摘要：

　　To achieve high drive current for Ⅲ-Ⅴ Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in future technology nodes,potential performance bottlenecks such as high series resistance need to be addressed.In this paper,we review several self-aligned metallization technologies available for reducing the source/drain series resistance in planar and multiple-gate Ⅲ-Ⅴ MOSFETs.Novel approaches for forming self-aligned contacts in Ⅲ-Ⅴ MOSFETs in a manner similar to the salicidation process in Silicon Complementary Metal-Oxide-Semiconductor (CMOS) Technology will be discussed.

作者: Yee-Chia Yeo Xingui Zhang Hua Xin Guo Sujith Subramanian Xiao Gong Ivana Eugene Yu-Jin Kong Zhu Zhu

作者单位: Department of Electrical and Computer Engineering, National University of Singapore(NUS),4 Engineering Drive 3, 117576, Singapore

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 192-197

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）