Epitaxial growth and properties of NiSiGe

摘要：

　　Epitaxial growth of Ni germanosilicide on relaxed SiGe (30% Ge content) substrate has been achieved by using 3 nm Al interlayer.This epitaxial layer shows a very good uniformity and smooth interface and surface.The epitaxial layer and the SiGe substrate match very well and no misfit dislocation is found at the interface.

作者: Bo Zhang Wenjie Yu Qingtai Zhao Gregor Mussler Dan Buca Bernhard Holl(a)inder Siegfried Mantl Miao Zhang

作者单位: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and I Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-FIT, 52425 Jülich, Germany State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and I

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 203-205

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）