Application of Atmospheric Pressure Micro-Thermal-Plasma-Jet to Ultra Rapid Thermal Annealing for Semiconductor Device Fabrication
We have developed a high-power-density micro-thermal-plasma-jet (μ-TPJ) to achieve ultra-rapid thermal annealing.Microsecond annealing was performed by μ-TPJ irradiation to an As-implanted Si wafer to form an ultra-shallow junction (US J).The.μ-TPJ could anneal the Si wafer surface at a temperature as high as 920 K for 340 μs.By reducing the annealing duration (ta) from 1.2 ms to 340 μs,the sheet resistance (Rs) of the As2+-implanted Si wafer decreased from 1520 to 1287 Ω/sq.In addition,the chemical bond states of As at the very surface were measured by X-ray photoelectron spectroscopy (XPS) and the fraction of activated As was estimated to be ~15% larger than that in the case of millisecond annealing.Surface As atoms in Si wafers were more efficiently activated by a microsecond annealing than a millisecond annealing owing to the suppression of diffusion and clustering.
Seiichiro Higashi
Graduate School of Advanced Sciences of Matter, Hiroshima University Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530 Japan
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
206-209
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）