Junction Strategies for lx nm Technology Node with FINFET and High Mobility Channel
Junction strategies for FINFETs and high mobility channel devices in lx nm node are discussed.Doping conformality and doping damage control are the keys for high performance scaled FINFETs.Damage-less conformal fin doping can be provided by Self Regulatory Plasma Doping (SRPD) process,based on radical absorption in low energy plasma and subsequent drive-in anneal.SRPD demonstrates 20% lon gain as compared to an ion implantation reference.The Implant Free Quantum Well (IFQW) device,featuring high mobility QW channel and doped epiraised Source/Drain (rSD),is one of the most promising device architectures for high mobility channel devices.Cartier confinement in QW channel enables good short channel control without halo,which in turn leads to reduced variability.Doped epirSD enables low temperature junction anneal that maintains high channel mobility.SiGe IFQW device with eSiGe epi SD shows very high Ion of 1.28mA/μm at Ioff =160nA/μm at gate length/width of 30nm/0.16μm.
Naoto Horiguchi Geert Eneman Taiji Noda Nadine Collaert Wilfried Vandervorst Aaron Thean Gerd Zschaetzsch Yuichiro Sasaki Ajay Kumar Kambham Bastien Douhard Mitsuhiro Togo Geert Hellings Jerome Mitard Liesbeth Witters
IMEC, Kapeldreef 75, Leuven, B-3001 Belgium Panasonic Corporation, 800 Higashiyama, Uozu, 937-8585 Japan also Institute voor Kern and Stralings Fysika, K.U.Leuven, Leuven, Belgium
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
216-221
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）