Schottky Barrier Height Modulation of NiGe/Ge Junction by P and Chalcogen (S, Se, or Te) Co-introduction for Metal Source/Drain Ge nMOSFETs

摘要：

　　The profiles and J-V characteristics of P-and/or chalcogen (S,Se,or Te)-introduced Ge substrates and NiGe/Ge diodes have been investigated for a Ge nMOSFET with a NiGe source/drain.We found that chalcogen and P co-introduction caused a greater increase in the number of electrons in Ge than only P introduction.Moreover,P introduction and P and chalcogen co-introduction resulted in lower (higher) Schottky barrier height (SBH) values for NiGe/nGe (NiGe/pGe) diodes than no impurity introduction.Te and P co-introduction was most effective in modulating the SBH.

作者: Masahiro Koike Yuuichi Kamimuta Tsutomu Tezuka

作者单位: Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology(AIST), Japan

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 222-225

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）