Band alignment of high-k dielectric on SiO2/Si stack
Band alignments of high-k dielectrics such as atomic layer deposition (ALD) grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron s pectroscopy (XPS).The band offsets at HfO 2/SiO2,Al2O3/SiO2 and Si O2/Si interfaces are found to vary with physical thickness of h igh-k dielectric.Concepts ofg ap states an d charge neutrality level (C NL) a re employed t o discuss band 1ineup of high-k/SiO2/Si stack.The XPS ob served resu Its are successfully interpreted and attributed to lower C NLs of HfO2 and Al2O3 related t o th at of Si O2/Si stack,indicating feasibility o f gap state based theory in investigating band alignment of oxide/semiconductor and oxide/oxide heterojunctions.
Jinjuan Xiang Xiaolei Wang Tingting Li Chao Zhao Wenwu Wang Junfeng Li Dapeng Chen Tianchun Ye
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beiiing 100029, China
国际会议
2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))
上海
英文
230-233
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）