A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

摘要：

　　An asymmetric Schottky and P-N junction source/drain MOSFET contains a conventional P-N junction and a hybrid junction for the source and drain or vice versa.Owing to the asymmetric source/drain structure,this device could be used in two different situations:Schottky-junction source MOSFETs and Schottky-junction drain MOSFETs.Performances of MOSFETs featuring a gate length of 100 nm with Schottky-junction source,Schottky-junction drain,Schottky-junction source/drain and conventional P-N junction have been obtained via numerical simulation by using Silvaco software package.The Schottky-junction source MOSFET exhibits significantly lower GIDL leakage current compared with the pure Schottky-barrier MOSFETs and slightly lower drive current compared with conventional P-N junction MOSFETs when the Schottky barrier height is set at 0.13 eV.For the Schottky-junction drain MOSFET,its drive current is found to be similar to that of conventional P-N junction MOSFETs and less sensitive to variations of Schottky barrier height compared with pure Schottky-barrier MOSFET.

作者: Peng Xu Cheng Hu Mei-Gui Chen Zhiwei Zhu David Wei Zhang Dongping Wu

作者单位: State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, Peoples Republic of China

会议类型: 国际会议

会议名称: 2012 12th International Workshop on Junction Technology (2012结技术国际研讨会(IWJT-2012))

会议地点: 上海

会议语种:英文

页码: 238-241

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）