Preparation of high Ga content Cu(In,Ga)Se2 thin films by sequential evaporation process added In2S3

摘要：

　　High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CulnSe2 ternary compounds and subsequently Ga2Se3,ln2Se3 and In2S3 binary compounds.The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13,and the properties of the thin films were investigated.XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure.The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04.The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the In2S3/(Ga2Se3+ In2Se3) ratio.

关键词： Cu(In,Ga)Se2 thin film solar cell high Ga content sulfur incorporation sequential evaporation

作者: Toshiyuki Yamaguchi Kazuma Tsujita Shigetoshi Niiyama Toshito lmanishi

作者单位: Department of Electrical and Computer Engineering,Wakayama National College of Technology,Gobo, Waka Industrial Technology Center of Wakayama Prefecture,60 Ogura, Wakayama-shi, 649-6261, Japan

会议类型: 国际会议

会议名称: 2012年国际材料与化学工程研讨会

会议地点: 北京

会议语种:英文

页码: 106-109

在线出版日期: 2012-10-26（万方平台首次上网日期，不代表论文的发表时间）