Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO∶In2O3 Powder Together with The N-Implantation

摘要：

　　The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation.The samples annealed at 700℃ deserved the optimal properties,the best of which exhibits electrical characteristics with the hole concentration of 4.04× 1018 cm-3,the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1 s-1 The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM,XRD,XPS and Hall measurements system,and the trend of carrier concentration with annealing time is discussed theoretically.

关键词： Radio frequency magnetron sputtering of powder target N-In codoping Ion-implantation P-type ZnO films Annealing

作者: Mao Nan Chunyang Kong Guoping Qin Haibo Ruan

作者单位: Department of Electronic Engineering,Baoji Vocationgal Technology College,Baoji,721013,China College of Physics and Information Technology,Chongqing Normal University,Chongqing,400047,China Department of Physics,Chongqing University,Chongqing,400044,China

会议类型: 国际会议

会议名称: the 2012 2nd International Conference on Frontiers of Manufacturing Science and Measuring Technology (第二届制造科学与检测技术国际会议(ICFMM 2012))

会议地点: 西安

会议语种:英文

页码: 350-353

在线出版日期: 2012-06-12（万方平台首次上网日期，不代表论文的发表时间）