Gas Phase Phosphorus Heavily-doped FZ Silicon Thermal Field Design and Growth Method

摘要：

　　This paper introduces the fabrication method of a kind of gas phase phosphorus heavily-doped float zone (FZ) silicon,including thermal field design (electromagnetic copper coil with double water cooling system).This method solves the problems during the pulling process of heavily-doped FZ silicon crystal of phosphorus doped.The gas phase phosphorus heavily-doped FZ silicon crystal using this methods with low oxygen content (less than 0.2ppma),low radial resistivity variation (less than 10%),low resistivity (the minimum of 0.002 ohm.cm),and is good to meet the transient voltage suppressor (TVS) for silicon substrate material requirements.

关键词： Float zone Gas phase, Heavily-doping Thermal Field Phosphorus

作者: Xuenan Zhang Jianhong Li Yutian Wang Changxu Zhang Chungeng Yang Haoping Shen Jihui Wang

作者单位: School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China; Tianjin Hua Tianjin HuanOu Semiconductor Material and Technology Co., Ltd., Tianjin, 300384, China School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China

会议类型: 国际会议

会议名称: the 2012 International Conference on Frontiers of Advanced Materials and Engineering Technology (2012年先进材料与工程技术国际会议(FAMET 2012))

会议地点: 厦门

会议语种:英文

页码: 929-932

在线出版日期: 2012-01-04（万方平台首次上网日期，不代表论文的发表时间）