Identification of ZnO defect structure by PL spectroscopy

摘要：

　　Defect structure of ZnO determines the optoelectronic characteristics of ZnO crystal and film.The identification and modulation of the defect structure is the foundation of the manufacture of optoelectronic devices.Although a good deal of research has been carried out about intrinsic defects and doping defects in ZnO,it is difficult to obtain a conclusive result accepted by all.In the paper,ZnO film is prepared by sol-gel method and the defect structure is expressed by photoluminescent (PL) spectroscopy.Based on some basic rules the intrinsic defect structure of ZnO is confirmed and the interaction of impurity Li and intrinsic defect is discussed.At the same time,some new electronic levels are proposed.It is surprising that although there are fourteen peaks in PL spectra of ZnO film,almost all the peaks can be identified by these basic rules.

关键词： ZnO film photoluminescent spectroscopy defect

作者: Pengfei Cheng Hanchen Liu Yingtang Zhang

作者单位: School of Science, Xian Polytechnic University, Xian 710048, China

会议类型: 国际会议

会议名称: the 2011 International Conference on Biotechnology, Chemical and Materials Engineering (2011生物,化学与材料工程国际会议(CBCME 2011))

会议地点: 昆明

会议语种:英文

页码: 135-138

在线出版日期: 2011-12-28（万方平台首次上网日期，不代表论文的发表时间）