Thermal Conductivity of Amorphous and Crystalline SiO2 Nano-films from Molecular Dynamics Simulations
Normal thermal conductivity of amorphous and crystalline SiO2 nano-films is calculated by nonequilibrium molecular dynamics (NEMD) simulations in the temperature range from 100 to 700K and thicknesses from 2 to 6nm.The calculated temperature and thickness dependences of thermal conductivity are in good agreement with previous literatures.In the same thickness,higher thermal conductivity is obtained for crystalline SiO2 nano-films.And more importantly,for amorphous SiO2 nano-films,thickness can be any direction of x,y,z-axis without effect on the normal thermal conductivity,for crystalline SiO2 nano-films,the different thickness directions obtain different thermal conductivity results.The different results of amorphous and crystalline SiO2 nano-films simply show that film thickness and grain morphology will cause different effects on thermal conductivity.
nano-films thermal conductivity molecular dynamics amorphous SiO2 crystalline SiO2
Yan He Yuan-zheng Tang Man Ding Lian-xiang Ma
Shandong Provincial Key Laboratory of Polymer Material Advanced Manufacturing Technology,No.99 Songling Road,Qingdao,Shandong Province,266061,P.R.China;College of Electromechanical Engineering,Qingdao University of Science & Technology,No.99Songling Road,Qingdao,Shandong Province,266061,P.R.China
国际会议
the Asian Workshop on Polymer Processing 2011(2011高分子加工技术亚洲研讨会(AWPP2011))
青岛
英文
64-69
2011-11-04(万方平台首次上网日期,不代表论文的发表时间)