Influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells

摘要：

　　In this paper,the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed,with different nickel film thicknesses of 200nm,400nm and 600nm.The formation of nickel silicide is obtained after the thermal annealing process for lmin,5min and 10min.The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment.The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed.The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.

关键词： nickel film dark current-voltage characteristics light-induced plating silicon solar cells

作者: Tao Li Chunlan Zhou Zhengang Liu Wenjing Wang Yang Song Zhihua Gao Ye Duan Youzhong Li

作者单位: The Key Laboratory of Solar Thermal Energy and Photovoltaic System,Institute of Electrical Engineeri Chinalight Solar Co.Ltd.,Beijing 101111,China

会议类型: 国际会议

会议名称: the international conference on Frontier of Nanoscience and Technology (2011纳米科学与技术国际会议(ICFNST 2011))

会议地点: 大理

会议语种:英文

页码: 672-675

在线出版日期: 2011-08-18（万方平台首次上网日期，不代表论文的发表时间）