Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles

摘要：

　　The electrostatic discharge (ESD) performance of GaN-based light-emitting diodes (LEDs) with naturally-textured p-GaN contact layers grown on c-axis miscut sapphire substrates are studied.During machine model tests,the device grown on a 0.35° miscut sapphire shows the highest ESD tolerance,while the one grown on a 0.2° miscut sapphire exhibits the poorest tolerance.It is discovered that this effect correlates with the presence of maximum capacitance (Cm) values,over the difference in defect densities between LEDs.The variation in Cm values is caused by parasitic capacitance effect induced by different p-GaN surface morphologies between the studied devices.This observation gives us more reliable application in improving ESD performance based on the device grown on a 0.35° miscut sapphire.

关键词： GaN electrostatic discharge (ESD) capacitance

作者: Jian-Kai Liou Yi-Jing Liu Shiou-Ying Cheng Po-Cheng Chou Chiun-Chia Chen Wen-Chau Liu

作者单位: Institute of Microelectronics,Department of Electrical Engineering,National Cheng-Kung University,1 Department of Electronic Engineering,National Ilad University,1,Sec.1,Shen-Lung Road,I-Lan,TAIWAN 20

会议类型: 国际会议

会议名称: the international conference on Frontier of Nanoscience and Technology (2011纳米科学与技术国际会议(ICFNST 2011))

会议地点: 大理

会议语种:英文

页码: 842-846

在线出版日期: 2011-08-18（万方平台首次上网日期，不代表论文的发表时间）