Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate
An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied.Based on the low-temperature and low-energy deposition conditions,the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states.The material analyses of EP approach,including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM),are examined.The DC performance of EP-gate device is investigated.In addition,the temperature influences of the studied devices,at the temperature region of 300 to 500K,are studied.As compared with the conventional thermal evaporation (TE) approach,the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K).Moreover,the EP approach also has advantages of easy operation and low cost.
PHEMT electroless plating (EP) temperature-dependent characteristic
Chien-Chang Huang Chun-Chia Chen Jian-Kal Liou Po-Cheng Chou Huey-lng Chen Shiou-Ying Cheng Wen-Chau Liu
Institute of Microelectronics,Department of Electrical Engineering,National Cheng-Kung University,1 Department of Chemical Engineering,National Cheng-Kung University,1 University Road,Tainan,TAIWAN 70 Department of Electronic Engineering,National Ilan University,No.1,Sec.1,Shen-Lung Road,I-Lan,TAIWAN
国际会议
大理
英文
891-895
2011-08-18（万方平台首次上网日期，不代表论文的发表时间）