Research on Effect of High Energy Implant to Resist Thickness

摘要：

　　The experiment discusses the issue of high-energy implant to the resist thickness and how the resist etched away during implantation process.The resist that is use as a mask or material to block the dopant ion such as Phosphorous,Boron or Arsenic introduces into silicon substrate.It is a common practice by all semiconductor industrial players to use photoresist as their protection on desired area in which purposely set as non-implanted area.The research benefits the engineer on determine the sufficient photoresist thickness for specific implant energy.

关键词： Implanter Photoresist FESEM Photoresist Thickness Implant Energy and Implant Dose

作者: Hazian Mamat NurFirdaus A Rahim Mohd Zahrin A Wahab Prof Dr.Azman Jalar

作者单位: Mimos Berhad, Technology Park Malaysia,Bukit Jalil, Kuala Lumpur, Malaysia

会议类型: 国际会议

会议名称: the 2011 International Conference on Frontiers of Manufacturing Science and Measuring Technology (第一届制造科学与检测技术国际会议(ICFMM2011))

会议地点: 重庆

会议语种:英文

页码: 718-722

在线出版日期: 2011-06-23（万方平台首次上网日期，不代表论文的发表时间）