A new method for measuring the residual stresses in multi-layered thin film systems
To meet different electrical or optical functionalities,thin films are often of multiple layers processed at high temperatures.Substantial residual stresses can therefore develop in such thin film systems due to the disparate thermal properties of the individual material layers.High stresses can lead to mechanical failure of the systems and thus understanding the residual stresses in thin film systems is important.This paper presents a systematic way to characterize the residual stresses in epitaxial,polycrystalline and amorphous layers by using X-ray diffraction (XRD) techniques.The single-point XRD pattern renders the stresses of crystalline layers and the scanning XRD gives the curvature of the whole film.Based on the newly-developed analytical model,the residual stresses of each layer can all be determined.
Thin films Multilayer Residual Stress X-ray Diffraction
Mei Liu Haihui Ruan L.C.Zhang
School of Mechanical and Manufacturing Engineering,The University of New South Wales,NSW 2052,Australia
国际会议
广州
英文
884-890
2012-11-16(万方平台首次上网日期,不代表论文的发表时间)