Influence of Sputtering Power on the Structure and Photoelectric Property of Ga Doped ZnO Films
Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering.The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD),field-emission scanning electron microscope (FESEM),Hall effect measurements and UV-Vis-NIR spectrometer.The results show that GZO thin films exhibit high c-axis-orientation,and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the films visible-light transmittance,but for all of the GZO thin films the average transmittance of the visible-light is above 80%.The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W.The lowest resistivity of 6.559×10-4Ω·cm can be obtained in the condition of the sputtering power is 100W,and the lowest square resistance is 7.9Ω/(D).
GZO films DC magnetron sputtering Sputtering power Optoelectronic properties
Lei Wu Qingnan Zhao Gang WU Dengkui Miao
Key Laboratory of Silicate Materials Science and Engineering,Wuhan University of Technology,China Jiang Su Xiuqiang Glasswork CO.,Ltd.Zhu jiang Road 102,Suqian city,China
国际会议
广州
英文
922-926
2012-11-16（万方平台首次上网日期，不代表论文的发表时间）