The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-sided CMP of SiC Wafer
In order to achieve high removal rate and high-quality processing on SiC wafer,we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4).It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry,the pH of slurry and the processing atmosphere.By using the slurry with the addition of KMnO4 of 0.1 mol/L,the removal rate was the fastest up to 1019nrn/h in the fixed pH of 6.By use of the slurry ofpH 3,the removal rate of C-face of SiC wafer was 1695nm/h On the other hand,the fastest removal rate of Si-face of SiC wafer was only 51 nm/h by using the slurry whose pH is 7.In the open air atmosphere,the removal rate was 915nm/h,which was higher than that at the higher and lower atmospheric pressure.
CMP Simultaneous Double-sided Polishing Processing Atmosphere SiC Removal Rate KMnO4 Si-face and C-face
Tao Yin Toshiro Doi Syuhei Kurokawa Osamu Ohnishi Tsutomu Yamazaki Zhida Wang Zhe Tan
Department of Mechanical Engineering Graduate School of Engineering Kyushu University 744Motooka,Nis Department of Mechanical Engineering,Faculty of Engineering,Kyushu University 744Motooka,Nishi-ku,Fu Department of Mechanical Design System Engineering,Faculty of Engineering University of Miyazaki,Miy
国际会议
广州
英文
1131-1134
2012-11-16（万方平台首次上网日期，不代表论文的发表时间）