Crack behavior of Si-doped GaAs crystals grown by pulling-down method

摘要：

　　The crack behavior of Si-doped GaAs crystals produced by a novel pulling-down method was investigated.Some cracks were observed in the crystal tail part and no twins or polycrystals were observed.The cracking mechanism was discussed considering the growth parameters,such as the pulling-down rate,annealing time and cooling speed of the furnace.The crystal was easily broken if the cooling rate was too fast.To avoid cracking,the temperature profile and the growth parameters had been optimized.The cleavage property of the GaAs crystal was strongly related to its atomic arrangement and corresponding electron density map.Ultrasonic vibration or mechanical machine would make the crystal cleaved along (110) plane.GaAs crystal displayed a strong anisotropic crack property under the force ofmicroindentation test.

关键词： Si-Doped Gaas Crystal Pulling-Down Method Crack Behavior Anisotropic

作者: FANG Yongzheng JIN Min HE Qingbo SHEN Hui JIANG Guojian XU Jiayue

作者单位: School of Materials Science and Engineering, Shanghai Institute of Technology, 120 Caobao Road, Shanghai 200235,China

会议类型: 国际会议

会议名称: the 2012 International Conference on Materials Science and Nanotechnology (2012年材料科学与纳米技术国际会议(ICMSN 2012))

会议地点: 广州

会议语种:英文

页码: 88-91

在线出版日期: 2012-11-16（万方平台首次上网日期，不代表论文的发表时间）