Growth of GaAsP by Solid Source Molecular Beam Epitaxy

摘要：

　　The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device.There because GaAsP have advantageous photoelectronic performance and adjustable band gap.We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE).On the basis of the optimized V/Ⅲ flux ratio,appropriate growth rate,and the substrate temperature for sample growth,different composition GaAs1-xPx layers had been grown on GaAs top.Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-xPx materials on GaAs substrate.The crystalline quality,surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy.The etched region and internal defect were also investigated.

关键词： GaAsP Lattice-mismatch Surface morphology Crystalline quality MBE

作者: Gang Cheng Jiao Zheng Tang Liu Feng Shi Lian Dong Zhang Wei Cheng Shu Fei Wang Yu Jian Zhou Zhuang Miao

作者单位: School of Materials Science and Engineering, Northwestern Polytechnical University, State Key Labora School of Materials Science and Engineering, Northwestern Polytechnical University, State Key Labora Science and Technology on low-light-level night vision laboratory, Xian 710065 China;North Night Vi

会议类型: 国际会议

会议名称: the 2012 International Conference on Materials Science and Nanotechnology (2012年材料科学与纳米技术国际会议(ICMSN 2012))

会议地点: 广州

会议语种:英文

页码: 159-162

在线出版日期: 2012-11-16（万方平台首次上网日期，不代表论文的发表时间）