The Magnetic Ordering of SiCN films prepared by Ion Implantation

摘要：

　　Room-temperature ferromagnetism was observed in the SiCN films prepared by ion implantation.The result indicates that N ion implantation dosage in the film has great effect on the observed room-temperature ferromagnetism of the films.Along with the increase of ion implantation dosage,the N ions increase and the magnetism enhances.Because of the ion implantation will cause a lot of defects on the surface of SiC films,which will induce a lot of vacancies.The C atoms are replaced by the N ions doped,the concentration of the N ions decides the charges states and spin polarizations of Si vacancy defects.Local magnetic moment is induced because of the spin polarization of the Si vacancy defects,and the films show ferromagnetic properties.Charge states and spin polarizations of silicon vacancy defects can be manipulated by N atoms which induces the ferromagnetism.

关键词： Sicn Films Room-Temperature Ferromagnetism Ion Implantation

作者: Meng Xu-Dong Yang FU Liu Xiao-yu

作者单位: Hebei North University, Zhangjiakou 075000, China ZhangjiakouVocational and Technical College, Zhangjiakou 075000, China

会议类型: 国际会议

会议名称: the 2012 International Conference on Materials Science and Nanotechnology (2012年材料科学与纳米技术国际会议(ICMSN 2012))

会议地点: 广州

会议语种:英文

页码: 325-328

在线出版日期: 2012-11-16（万方平台首次上网日期，不代表论文的发表时间）