Microstructures and Photoluminescence of a-Si∶H/a-SiNx Multilayers Annealed at Different Temperature
Series of a-Si∶H/a-SiNx multilayers were prepared by very high frequency plasma enhanced chemical vapor deposition system.As-deposited samples were thermally annealed at the various temperatures.The effects of thermal annealing on the properties of luminescence were investigated.The photoluminescence intensity of the film annealed at 600 ℃ is found to be higher than that of the film without annealing.However,with further increasing the annealing temperature from 600 ℃ to 800 ℃,the photoluminescence intensity of the film rapidly decreases.Fourier transform infrared spectroscopy and Raman-scattering spectroscopy were used to study the changes of the microstructures and bonding configurations.Based on the measurements of structural and bonding configurations,the improved photoluminescence intensity is attributed to the forming of radiative defect states caused by the effusion of hydrogen in the films.
A-Si∶/a-SiNx Multilayers Thermal Annealing Photoluminescence
Chao Song Yan Qing Guo Xiang Wang Jie Song Rui Huang
Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041,China
国际会议
广州
英文
465-468
2012-11-16（万方平台首次上网日期，不代表论文的发表时间）