Influence of Radio Frequency Power on the Structural Properties of nc-Si Films Fabricated by VHF-PECVD

摘要：

　　In recent years,hydrogenated nanocrystalline silicon (nc-Si∶H) film has received much attention due to its potential application in various optoelectronic devices.In the present work,nanocrystalline silicon (nc-Si) films were fabricated from SiH4 diluted with H2 in very high frequency (40.68 MHz) plasma enhanced chemical vapor deposition system.The influence of radio frequency (rf) power on the structural properties of nanocrystalline silicon films has been studied.Raman spectra show that the crystallinity of the nc-Si films can be increased by promoting the rf power.But over high rf power leads to the structural deterioration of nc-Si:H film.AFM images manifest that,with the increase of deposition time,the grain size becomes larger accompanied by the decrease of the number density.

关键词： Nanocrystalline Silicon VHF-PECVD Rf Power

作者: Yan Qing GUO Xiang Wang Chao Song Rui Huang Jie Song

作者单位: Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China

会议类型: 国际会议

会议名称: the 2012 International Conference on Materials Science and Nanotechnology (2012年材料科学与纳米技术国际会议(ICMSN 2012))

会议地点: 广州

会议语种:英文

页码: 469-472

在线出版日期: 2012-11-16（万方平台首次上网日期，不代表论文的发表时间）