The laser ablated deposition of Si nanocrystalline

摘要：

　　The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser (laser fluence 4 J/cm2,repetition rate 1 Hz),and at ambient pressure of 10Pa of pure Ar gas,the nanocrystalline silicon film was deposited on a glass or single crystalline Si substrate located at a distance of 3 cm from the Si target in 30 and 10min,respectively.The Raman and X-ray diffraction spectra of the film deposited on the glass substrate indicate the film is nanocrystalline,which means that it is composed of Si nanoparticles.Scanning electron microscope of the film on the Si substrate shows that the film has the mosaic structure of Si nano-crystallites of uniform size.The photoluminescence peak wavelength is 599nm with full width at half maximum of 56nm.

关键词： Silicon-based particles Laser ablated deposition Photoluminescence

作者: Yue Wu Xiao Hong Meng

作者单位: ＃49-1903,No.20 ChengFu Road,HaiDian District,Beijing,China,100083 China University of Geosciences, Beijing,China,100083

会议类型: 国际会议

会议名称: the 2012 International Conference on Materials Science and Nanotechnology (2012年材料科学与纳米技术国际会议(ICMSN 2012))

会议地点: 广州

会议语种:英文

页码: 481-484

在线出版日期: 2012-11-16（万方平台首次上网日期，不代表论文的发表时间）