Temperature Dependence of Microwave Dielectric Performance of Silica
By use of material studio software,the lattice constant,band energy gap and optical permittivity of silica are calculated,and to be used as the key parameters to investigate the microwave dielectric properties of silica.It is found that its permittivity and loss are increased with increasing temperature.In addition,the ionic conduction loss caused by the defects in silica is very small from the calculation and the value is about 10-5 level at 2000K.It is found that the result of the phenomenological analysis of the dielectric properties is consistent with the experimental data.The application of this analysis allows estimate the permittivity and dielectric loss of silica both at high temperature and microwave band,which is currently still difficult to be measured directly.
Silica dielectric performance high temperature microwave
Zhang Ting Wu Mengqiang Zhang Shuren He Ming En Li Wang Jingming Zhang Dahai He Fengmei LIi Zhongping
Teaching and Research Section of Physics, Chengdu Medical College, Chengdu 610083, China; State Key State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing 100076, China
国际会议
上海
英文
13-13
2012-10-19（万方平台首次上网日期，不代表论文的发表时间）