Effect of preparation temperature on photovoltaic characteristics of (a-C∶Fe)/Al2O3/Si structure
The iron-doped amorphous carbon films (a-C∶Fe) and Al2O3 films were successfully prepared on n-type silicon substrates by pulsed laser deposition method at substrate temperatures ranging between RT to 400℃.The short-current,open-circuit voltage and the corresponding fill factor of the (a-C∶Fe)/Al2O3/Si cells were investigated in order to understand the effect of the deposition temperature on the photovoltaic (PV) properties.The (a-C∶Fe)/Al2O3/Si cells showed an interesting dependence of the (a-C∶Fe) and Al2O3 films deposition temperature and low deposition temperature is found to have a bad performance on PV effect.When the deposition temperature for a-C∶Fe and Al2O3 films are both near 350℃,the cells show the best PV performance with short-current density of 9.51 mA/crn2 and open-circuit voltage of 0.35V.The corresponding fill factor and energy conversion efficiency are 51% and 1.69% respectively.
Photovoltaic eEffect amorphous carbon preparation temperature
Tan Xinyu Jiang Yong Qinqin Liu Yuan Liu Tian Xinrui Jiao Yin
New Energy Research Institute, China Three Gorges University, Yichang 443002, P.R.China;School of Ma School of Materials Science and Engineering, University of Science and Technology Beijing 100083,P.R New Energy Research Institute, China Three Gorges University, Yichang 443002, P.R.China
国际会议
上海
英文
107-107
2012-10-19（万方平台首次上网日期，不代表论文的发表时间）