NiO-doped CaCu3Ti4O12 Thin Film by Sol-gel Method
Undoped CaCu3Ti4O12 thin film and nickel doped CaCu3-xNixTi4O12(CCNTO) thin film with x =0.10,0.20 and 0.30 were prepared by sol-gel method.The effects of NiO on the dielectric properties and mierostructure revolution of CCTO were studied.The crystalline structure and the surface morphology of the films were markedly affected by the variety NiO content.AFM micrographs of the CaCu3-xNixTi4O12 samples showed that the grain size of Ni-doped CCTO was smaller than the grain size of CCTO without Ni doped.When x =0.2,the lowest leakage current was obtained and the minimum value reached to 0.564 mA,meanwhile,the highest threshold voltage and nonlinear coefficient were found,where the maximum values of them were 81V/mm and 1.9 respectively.The dielectric constant increased when the doping concentration of Ni reached a certain level,however,the dielectric loss increased in the mass.
CaCu3Ti4O12 sol-gel electrical properties microstructure
Song Qi Zhang Ke Xu Hong-xing Luo Xue-dan Jiao Lei Yang Yong-tao Yu Ren-hong Xu Dong
School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; Key Laborat School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; Changzhou E School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; Changzhou M
国际会议
上海
英文
139-139
2012-10-19（万方平台首次上网日期，不代表论文的发表时间）