Ferromagnetism in AlN nanorod arrays induced by doping of a nonmagnetic element:Sn
Sn-doped AlN nanorod arrays were grown on Si substrate by doping of nonmagnetic element Sn via a catalyst-free chemical vapor deposition (CVD) method.X-ray diffraction (XRD),X-ray photoemission spectroscopy (XPS),scanning electron microscopy (SEM),Energy dispersive x-ray spectroscopy (EDS),photoluminescence (PL) were employed to characterize the structure and morphology of the products.EDS and XPS demonstrated that Sn was successfully doped into the AlN Nanorods.Sn-doped AlN showed a highly uniform and densely packed array of nanorods with typical diameters of 50-80rim and lengths up to 150-200nm.The magnetic measurement byVibration Sample Magnetometer (VSM) demonstrated that Sn-doped AlN DMSs exhibited RT ferromagnetism.It is suggested that the RT ferromagnetism caused by Sn doping is ascribed to defects which play an important role for ferromagnetic order in Sn-doped AlN.
AlN doping room-temperature ferromagnetism nanomaterial CVD
Ren Yinshuan Pan Dong Jina Jikang Jiang Xiaokang Li Jin Sun Yanfei Zhu Yan Wu Rong
Department of Physical Science and Technology, XinJiang University, Urumqi 830046, China Department of Physical Science and Technology, XinJiang University, Urumqi 830046, China; Xinjiang K School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 6
国际会议
上海
英文
150-150
2012-10-19（万方平台首次上网日期，不代表论文的发表时间）